The absence of a band-gap, however, has prevented its implementation as a possible replacement in semiconductor industry 10.įor monolayer graphene, both theoretical and experimental 11, 12, 13, 14 studies have demonstrated that an effective option towards its electronic modulation is nitrogen doping, which generates n-type extrinsic electrical conductivity 15. Since graphene was effectively isolated in 2004 1, its outstanding properties, such as flexibility, mechanical resistance, high intrinsic mobility and electromechanical modulation 2, 3, 4, 5, 6, 7, 8, 9 have attracted huge interest from researchers. The occurrence of these bonds may result in very specific electronic and mechanical properties of the bilayer structures. We show that this splitting is due to the formation of interlayer bonds mediated by nitrogen defects on the layers of the material. We have performed state of the art parameter-free simulations to investigate the cause of an unexpected splitting of the XPS signal as the concentration of nitrogen defects increased. XPS analysis showed that we achieved control of the concentration of nitrogen dopants incorporated into the final samples. Raman spectroscopy confirmed that nitrogen-doped bilayer structures were produced by this method.

We here report the production of nitrogen doped bilayer graphene in a fast single step (2.5 minutes), at reduced temperatures (760 ☌) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD). Therefore, the quest for reproducible methods for the large scale synthesis, as well as the manipulation, characterization and deeper understanding of these structures is a very active field of research.

New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems.

Xps peak area to atom percentage